| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film integrated circuit with high reliability by providing an etchant capable of manufacturing a stable TFT with high reproducibility. SOLUTION: The thin film integrated circuit comprises a silicon oxide film containing 1 to 10% of nitrogen formed on a substrate, a gate insulating film formed on the silicon oxide film containing 1 to 10% of nitrogen, a gate line formed on the gate insulating film, a silicon oxide film formed on the gate line, a silicon nitride film formed on the silicon oxide film, and wiring extending from a source or a drain formed on the silicon nitride film. COPYRIGHT: (C)2005,JPO&NCIPI |
