发明名称 LIGHT EMITTING ELEMENT AND ITS MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a light emitting element having an element substrate bonded to an emission layer part through a contact metal layer and a reflection metal layer in which the emission layer part is insusceptible to diffusion of components from the contact metal layer even if the contact metal layer is subjected to heat treatment for alloying. <P>SOLUTION: In the light emitting element 100, a contact metal layer 32 is interposed between a compound semiconductor 60 and a main metal layer 10 in order to reduce contact resistance between them. A part of the compound semiconductor 60 between the contact metal layer 32 and an emission layer part 24 exhibits translucency to a light beam from the emission layer part 24 and serves as a semiconductor layer 25 for blocking diffusion of components from the contact metal layer 32 into the emission layer part 24. When the diffusion blocking semiconductor layer 25 is composed of AlGaAs, diffusion of Ge, Ni and Au from the contact metal layer 32 into the emission layer part 24 is suppressed effectively. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005019424(A) 申请公布日期 2005.01.20
申请号 JP20030155921 申请日期 2003.05.30
申请人 SHIN ETSU HANDOTAI CO LTD 发明人 HAGIMOTO KAZUNORI;IKEDA ATSUSHI;TAKAHASHI MASANORI;YAMADA MASAHITO
分类号 H01L33/10;H01L33/30;H01L33/34;H01L33/38;H01L33/40 主分类号 H01L33/10
代理机构 代理人
主权项
地址