发明名称 Clock-synchronous semiconductor memory device
摘要 A semiconductor device comprises a memory cell array, a control section and a latency setting circuit. The control section configured to receive a clock signal and a control signal, and configured to output a plurality of data in synchronism with the clock signal after the control signal is asserted. The latency setting circuit configured to set the latency N, and the latency setting circuit including at least one switch which fixes the latency by use of an externally supplied signal.
申请公布号 US6842397(B2) 申请公布日期 2005.01.11
申请号 US20030642624 申请日期 2003.08.19
申请人 发明人
分类号 G11C7/10;G11C8/04;(IPC1-7):G11C7/00 主分类号 G11C7/10
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