METHOD FOR FORMING TRENCH ISOLATION LAYER OF SEMICONDUCTOR DEVICE RESTRAINING MOAT USING NITRIDE SPACER

摘要

PURPOSE: A method for forming a trench isolation layer of a semiconductor device is provided to restrain moat by forming a nitride spacer to surround moat generation region. CONSTITUTION: A trench is formed in a semiconductor substrate(20) using a pad nitride pattern. An isolation layer(26) is formed by filling an insulating layer in the trench and polishing. The pad nitride pattern is removed by wet-etching. A nitride spacer(28) is formed at interface between the isolation layer and an active region by depositing a nitride layer on the resultant structure and etch-back processing. Cleaning, thermal processing and well ion-implantation processing are sequentially performed.