| 摘要 |
PURPOSE: A method for verifying a program and an erasing state of a flash memory device is provided to reduce required time in verifying by verifying over program of every memory cell simultaneously after verifying each program of each memory cell. CONSTITUTION: A method for verifying a program of a flash memory device having plural memory cell and a memory cell array of a string unit which is a series connection of select transistors each connected with a bit line and a source line, comprises the steps of: successively programming and verifying program(21) in each memory cell in a turn-on state of the select transistor; verifying over program(22) by applying an over-program verifying bias voltage to word lines of every single memory cell when the programming is completed.
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