| 摘要 |
PURPOSE:To obtain the stable thin film transistor which can be operated at a low operating voltage by a method wherein a silicon dioxide, which is formed by performing a chemical vapor-phase growing method at a specific temperature, is used as a gate insulating film. CONSTITUTION:A gate electrode 2 consisting of polycrystalline silicon, a gate insulating film 3 consisting of silicon dioxide, a semiconductor film 4 consisting of polycrystalline silicon or single crystal silicon thin film, a source electrode 6, a junction layer 5, a drain electrode 8 and a junction layer 7 are formed on an insulating substrate 1, and a field effect type thin film transistor is formed. Silicon dioxide, which is formed by performing a CVD method using the mixed gas of dichlorosilane and nitrous oxide at 850 deg.C or above, is used for a gate film 3. Due to having low fixed discharge, the irregularity of the threshold voltage of the thin film transistor can be brought within + or -0.1V, and threshold voltage can also be made below 3V. |
