| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric thin film device which is capable of improving the degree of crystal orientation of an unpolarized ferroelectric thin film, and to provide its manufacturing method and a ferroelectric memory. SOLUTION: A lower electrode layer 2, an oxide crystalline nucleus layer 3, a ferroelectric thin film layer 4, and an upper electrode layer 5, are successively laminated on a base substrate 1 for the formation of the ferroelectric thin film device. The ferroelectric thin film layer 4 has a crystal orientation rate of 60% or above when it is unpolarized. COPYRIGHT: (C)2005,JPO&NCIPI
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