| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for etching by which the etched shape of an insulating film having a low dielectric constant can be stabilized, and to provide a method of manufacturing semiconductor device utilizing the method. SOLUTION: In the method of manufacturing semiconductor device, for example, a photoresist film 15 is formed on a cap oxide film 14 and a via hole pattern is by using the photolithography. Then via holes 16 are formed by collectively etching the cap oxide film 14 and the insulating film 13 having the low dielectric constant. After the via holes 16 are formed, a wiring groove pattern is formed by using the photoresist film 15. Thereafter, wiring grooves 17 are formed by etching the cap oxide film 14 and insulating film 13, and then, removing the photoresist film 15 by ashing and etching a silicon oxide film (diffusion preventing film) 11. In this method, the via holes 16 and wiring grooves 17 are formed in the insulating film 13 by plasma etching under a condition of≥60 mTorr (7999.32 mPa) in pressure and≤600 W in high-frequency output (RF power) in an etching gas atmosphere containing a fluorocarbon gas, an O<SB>2</SB>gas, and an Ar gas. COPYRIGHT: (C)2005,JPO&NCIPI
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