| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is equipped with a diffusion depth check pattern capable of relatively measuring the depth of diffusion taking advantage of a relation between the depth and spread of diffusion. SOLUTION: The semiconductor device is equipped with a first rectangular pattern forming a prescribed diffusion layer, a second rectangular pattern which is set separate from the long side of the first rectangular pattern by a distance of (a1) confronting it and forms a prescribed diffusion layer, and an n-th rectangular pattern which is set separate from the long side of the first rectangular pattern by a distance of (a2) confronting it and separate from the one side of the second rectangular pattern by a distance of (a12) and forms a prescribed diffusion layer. COPYRIGHT: (C)2005,JPO&NCIPI
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