| 摘要 |
PROBLEM TO BE SOLVED: To improve the crystal structure of a ferroelectric film and to improve the characteristics of a ferroelectric element. SOLUTION: The ferroelectric element is manufactured by a process comprising a step of successively forming contact films 12, 13, 14 and 15, a lower electrode 16, the ferroelectric film 17 and an upper electrode 18 on an insulating film 4, a step of etching the upper electrode 18 and the ferroelectric film 17, and a step of executing heat treatment of the ferroelectric film 17 in the state of covering the contact films 12, 13, 14 and 15 with the lower electrode 16. COPYRIGHT: (C)2005,JPO&NCIPI
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