| 摘要 |
PURPOSE:To narrow the width of a quantum fine line enough by stacking semiconductor layers of nondope and semiconductor layers doped in high concentration with impurities alternately on a semiconductor substrate, and forming quantum well layers at the cross sections of these semiconductor layers, and then diffusing impurities into the quantum well layers. CONSTITUTION:Undoped semiconductor layers 102 and semiconductor layers 103 doped with impurities in a high concentration are made alternately on a semiconductor substrate 101, and one part each or the whole parts of the semiconductor layers are exposed. And a quantum well layer 110 is laminated on this exposed part, and impurities diffuse from the semiconductor layers 103 doped with impurities, and they disorder the quantum well layer 110 partially, and form quantum fine lines 130 at the parts being not disordered. Hereby, quantum fine lines having narrow widths can be made easily. |
