| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of measuring electric characteristics of a semiconductor wafer using a metal electrode formed on the surface of the semiconductor wafer, and to provide a device used therefor. SOLUTION: Optical system means photographs a metal electrode such as gold and aluminum formed on the surface of the semiconductor wafer with a method of deposition or the like. The area of the metal electrode is calculated from image information photographed by the optical system means, and the calculated value of the area of the metal electrode is used for the measurements of specific resistance, impurity concentration, and I-V characteristic or the like of the semiconductor wafer. COPYRIGHT: (C)2005,JPO&NCIPI
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