发明名称 |
Laser beam irradiation method and method of manufacturing a thin film transistor |
摘要 |
A laser beam irradiation method that achieves uniform crystallization, even if a film thickness of an a-Si film or the like fluctuates, is provided. The present invention provides a laser beam irradiation method in which a non-single crystal semiconductor film is formed on a substrate having an insulating surface and a laser beam having a wavelength longer than 350 nm is irradiated to the non-single crystal semiconductor film, thus crystallizing the non-single crystal silicon film. The non-single crystal semiconductor film has a film thickness distribution within the surface of the substrate, and a differential coefficient of a laser beam absorptivity with respect to the film thickness of the non-single crystal semiconductor film is positive.
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申请公布号 |
US2004248347(A1) |
申请公布日期 |
2004.12.09 |
申请号 |
US20040883767 |
申请日期 |
2004.07.06 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
SHIMOMURA AKIHISA;KASAHARA KENJI;SHIGA AIKO;MIYAIRI HIDEKAZU;TANAKA KOICHIRO;DAIRIKI KOJI |
分类号 |
H01L21/20;H01L21/336;H01L29/786;(IPC1-7):H01L21/00;H01L21/84 |
主分类号 |
H01L21/20 |
代理机构 |
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