| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the number of processes by forming an upper layer re-wiring by a method except electrolytic plating when a semiconductor device having the upper layer re-wiring is manufactured. <P>SOLUTION: A semiconductor construction object 2 called CSP is bonded on an upper surface center of a base board 1 through a bonding layer 3. The insulating layer 14 of a rectangular frame shape which is composed of resin is so arranged on an upper surface of the base board 1 that an upper surface of the layer 14 becomes almost the same surface as an upper surface of the semiconductor construct 2. An insulating film 15 composed of pre-preg material is arranged on the upper surfaces of the semiconductor construct 2 and the insulating layer 14, making an upper surface of the film 15 flat. The upper layer re-wiring 16 wherein a metal plate is patterned is arranged on a prescribed position of the upper surface of the insulating film 15. In this case, a conic projection electrode 17 whose top is cut and which is collectively formed on a lower surface of the upper layer re-wiring 16 is made to encroach on the insulating film 15 and connected to the upper surface center of a pillar-shaped electrode 12. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
