发明名称 Semiconductor memory having a flexible dual-bank architecture with improved row decoding
摘要 A semiconductor memory includes a plurality of memory array partitioned into first and second memory banks in correspondence with one of a plurality of mask options such that the first memory bank includes at least one but less than all of the plurality of memory arrays and the second memory bank includes a corresponding remainder of the plurality of memory arrays. A first horizontal global row decoder is configured to receive a first subset of addresses for the first memory bank and in response provide a first plurality of predecoded row address signals on a first plurality of lines extending only across the at least one but less than all of the plurality of memory arrays. A second horizontal global row decoder is configured to receive a first subset of addresses for the second memory bank and in response provide a second plurality of predecoded row address signals on a second plurality of lines extending only across the corresponding remainder of the plurality of memory arrays.
申请公布号 US2004246806(A1) 申请公布日期 2004.12.09
申请号 US20040768398 申请日期 2004.01.29
申请人 WINBOND ELECTRONICS CORPORATION 发明人 HA CHANG WAN
分类号 G11C8/10;G11C8/14;G11C16/08;G11C16/20;(IPC1-7):G11C8/00 主分类号 G11C8/10
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