发明名称 |
Planar polymer memory device |
摘要 |
The present invention provides a planar polymer memory device that can operate as a non-volatile memory device. A planar polymer memory device can be formed with two or more electrodes and an electrode extension associated with one electrode, wherein a selectively conductive medium and dielectric separate the electrodes. The method for forming a planar polymer memory device comprises at least one of forming a first electrode with an associated plug, forming a second electrode, forming a passive layer over the extension, depositing an organic polymer and patterning the organic polymer. The method affords integration of a planar polymer memory device into a semiconductor fabrication process. A thin film diode (TFD) can further be employed with a planar polymer memory device to facilitate programming. The TFD can be formed between the first electrode and the selectively conductive medium or the second electrode and the selectively conductive medium.
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申请公布号 |
US2004238864(A1) |
申请公布日期 |
2004.12.02 |
申请号 |
US20030452877 |
申请日期 |
2003.06.02 |
申请人 |
TRIPSAS NICHOLAS H.;BUYNOSKI MATTHEW S.;OKOROANYANWU UZODINMA;PANGRLE SUZETTE K. |
发明人 |
TRIPSAS NICHOLAS H.;BUYNOSKI MATTHEW S.;OKOROANYANWU UZODINMA;PANGRLE SUZETTE K. |
分类号 |
G11C11/56;G11C13/02;H01L27/115;H01L27/24;H01L27/28;(IPC1-7):H01L27/108 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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