| 摘要 |
PURPOSE: A method for isolating a shallow trench is provided to achieve the sidewall profile of an etching mask by controlling a gas when a hard mask is etched on condition of omitting a process of manufacturing a space. CONSTITUTION: A hard mask having at least two insulation layers is formed on a semiconductor substrate(100). A photoresist pattern is formed on the hard mask layer wherein a shallow trench region is defined. The hard mask layer is tilt-etched. The photoresist layer is removed. A shallow trench(108) is formed by the etching process using the tilted hard mask pattern(103').
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