| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a field-effect transistor in which a built-in electric field is formed in a direction where carriers in a channel region capable of operating at a high speed move, with superior controllability. SOLUTION: An opening part 104 is formed in an Si substrate having a (001) surface by dry etching. At this time, side walls are so selected as to form with a pair of facing a (100) surface and a (-100) surface, and a (1-10) surface, a (-110) surface, a (110) surface and a (-1-1-0) surface. Then, by wet etching, a bottom surface formed with a (-11-1) surface, a (11-1) surface, a (-1-1-1) surface and a (1-1-1) surface is made. An Si buffer layer 110, an SiGe layer 111 and an Si layer 115 are almost selectively formed on the (100) surface and the (-100) surface. Then a gate oxide film 118 and a gate 120 are formed and an inter-layer insulating film 121 is deposited, to form a source electrode 123 and a drain electrode 124. COPYRIGHT: (C)2005,JPO&NCIPI
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