PLASMA PROCESSING SYSTEM AND METHOD

摘要

A plasma processing system includes a chamber containing a plasma processing region and a chuck constructed and arranged to support a substrate within the chamber in the processing region. The plasma processing system further includes at least one gas injection passage in communication with the chamber and configured to facilitate removal of particles from the chamber by passing purge gas therethrough. In one embodiment, the plasma processing system can include an electrode configured to attract or repel particles in the chamber by electrostatic force when the electrode is biased with DC or RF power. A method of processing a substrate in a plasma processing system includes removing particles in a chamber of the plasma processing system by supplying purge gas through at least one gas injection passage in communication with the chamber.