发明名称 Diode-and-fuse memory elements for a write-once memory comprising an anisotropic semiconductor sheet
摘要 A donor/acceptor-organic-junction sheet employed within an electronic memory array of a cross-point diode memory. The donor/acceptor-organic-junction sheet is anistropic with respect to flow of electrical current and is physically unstable above a threshold current. Thus, the volume of the donor/acceptor-organic-junction sheet between a row line and column line at a two-dimensional memory array grid point serves both as the diode component and as the fuse component of a diode-and-fuse memory element and is electrically insulated from similar volumes of the donor/acceptor-organic-junction sheet between neighboring grid point intersections.
申请公布号 US6813182(B2) 申请公布日期 2004.11.02
申请号 US20020160802 申请日期 2002.05.31
申请人 HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. 发明人 PERLOV CRAIG M;FORREST STEPHEN
分类号 G11C13/00;G11C17/16;H01L27/10;H01L27/102;H01L27/28;H01L51/00;H01L51/05;H01L51/30;(IPC1-7):G11C11/36 主分类号 G11C13/00
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