| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor substrate and manufacturing method thereof whereby gettering can be performed more properly than conventional ones even when using a semiconductor wafer having such a structure as to provide a semiconductor layer for forming elements thereon on an insulation layer. SOLUTION: As shown in Fig.(a), in this semiconductor substrate, a single-crystal silicon layer 30 for forming elements thereon has an SOI structure wherein the layer 30 is provided on a silicon oxide film 20 covering a silicon substrate 10 used as a supporting substrate. Further, the single-crystal silicon layer 30 has diffusion regions 31 doped with boron. Moreover, each diffusion region 31 is separated from a region for forming thereon such elements as transistors (an element forming region), by using each thermal oxidation film 40 so formed as to contact it with each diffusion region 31. COPYRIGHT: (C)2005,JPO&NCIPI
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