| 摘要 |
<p>According to the heat treating jig of the invention, a circular plate to be mounted has a diameter which is not less than 60% of the diameter of a semiconductor wafer, the thickness being from 1.0 mm to 10 mm, the surface roughness (Ra value) of the surface contacting the wafer being from 0.1 µm to 100 µm, and by specifying the degree of flatness in the direction of concentric circles or in the diametrical direction, or, instead of the degree of flatness, by measuring the maximum height in each region by multipoint flatness measurement and adjusting the flatness so that the difference between the maximum height in each region and the imaginary mean surface value found from the measured value is not more than 50 µm, it is possible to reduce slippage which is caused by the semiconductor wafer intimately contacting the heat treating jig. Thereby, even in the case of heat treating a semiconductor wafer having high self-weight stress, occurrence of slippage can be effectively prevented, and the heat treating jig can be widely used as a stabilized semiconductor substrate heat treating jig.</p> |
