发明名称 MEMORY ELEMENT AND METHOD FOR MANUFACTURING IT, AND ELECTRONIC ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a memory element and a manufacturing method capable of easily realizing a manufacturing process and a large integration with a simple configuration, and to provide an electronic element. SOLUTION: A plurality of fullerene carbon molecules 11 are two-dimensionally arranged and the spacing of them are fixed by an insulating film 12. A writing is conducted by switching an off-state (no electric charge) of all fullerene carbon molecules 11 to an on-state (electric charge) of the specific fullerene carbon molecules 11. For instance, the writing is conducted by selectively applying a voltage to the specific fullerene carbon molecules 11 by the use of an STM to selectively inject electric charge to the fullerene carbon molecule 11. For instance, the reading is conducted by measuring a potential plane of each fullerene carbon molecule 11 by the use of an STS or a KFM. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004288930(A) 申请公布日期 2004.10.14
申请号 JP20030080120 申请日期 2003.03.24
申请人 SONY CORP 发明人 SHIRAISHI SEIJI
分类号 H01L29/06;H01L27/10;H01L29/66;(IPC1-7):H01L27/10 主分类号 H01L29/06
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