发明名称 Versatile system for limiting mobile charge ingress in SOI semiconductor structures
摘要 Disclosed are apparatus and method for limiting mobile charge (314) ingress within a silicon-on-insulator (SOI) substrate (300). A mask (308) is applied to the substrate to form an aperture (210) over a desired portion of the substrate near its outer edge. A buffer material (214), selected to impede mobile charge ingress, is implanted (310) through the aperture into the insulator layer (304) of the substrate to form a buffer structure (312).
申请公布号 US6803295(B2) 申请公布日期 2004.10.12
申请号 US20020174367 申请日期 2002.06.18
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 ROST TIMOTHY A.;HOLLINGSWORTH DEEMS RANDY
分类号 H01L21/762;(IPC1-7):H01L21/301 主分类号 H01L21/762
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