发明名称 |
Versatile system for limiting mobile charge ingress in SOI semiconductor structures |
摘要 |
Disclosed are apparatus and method for limiting mobile charge (314) ingress within a silicon-on-insulator (SOI) substrate (300). A mask (308) is applied to the substrate to form an aperture (210) over a desired portion of the substrate near its outer edge. A buffer material (214), selected to impede mobile charge ingress, is implanted (310) through the aperture into the insulator layer (304) of the substrate to form a buffer structure (312).
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申请公布号 |
US6803295(B2) |
申请公布日期 |
2004.10.12 |
申请号 |
US20020174367 |
申请日期 |
2002.06.18 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
ROST TIMOTHY A.;HOLLINGSWORTH DEEMS RANDY |
分类号 |
H01L21/762;(IPC1-7):H01L21/301 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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