| 摘要 |
PURPOSE: A method for improving a photoresist profile by supplying electrons on the surface of a wafer before forming the photoresist is provided to increase the stability of a pattern during an etching step and to improve critical dimension uniformity of the pattern. CONSTITUTION: The method for improving a photoresist profile comprises the steps of: (a) providing a semiconductor wafer(310); (b) supplying electrons on the semiconductor wafer and forming a photoresist on the top of the resultant body; (c) baking and exposing the photoresist; and (d) further baking the exposed photoresist(330b) and then performing development. In step (b), electrons are supplied by using an electron shower device. The method may further comprise a step of cooling the wafer before forming the photoresist.
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