| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of growing crystal by which the growing speed of a chemically stable crystal can be increased without compromising the crystallinity of the crystal. <P>SOLUTION: On an aluminum nitride (AlN) foundation layer 1 formed on a substrate 6, an Al-containing deposited layer 2 is formed by supplying trimethylaluminum (TMA) which is a first raw material using Al which is the first constituent element of an AlN crystal as a constituent component as an Al feed gas flow 3. Then the AlN crystal is epitaxially grown on the substrate 6 through the reaction between ammonia and the deposited layer 2, by supplying the ammonia to the layer 2 as an ammonia gas flow 4. Ammonia is a second raw material using nitrogen (N) as the second constituent element of the AlN crystal as a constituent component. At the time of expitaxially growing the AlN crystal, the thickness of the deposited layer 2 is increased so that the layer 2 may contain two or more atomic layers of Al which is the first constituent element of the AlN crystal, by raising the temperature of the substrate 6 to a value exceeding the melting point of the deposited layer 2. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
