发明名称 SEMICONDUCTOR INTEGRATED DEVICE AND ITS PRODUCING PROCESS
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a semiconductor integrated device in which corrosion of pad electrode can be suppressed. <P>SOLUTION: The semiconductor integrated device comprises a semiconductor substrate 10 having a semiconductor integrated circuit 22 formed on the surface, pad electrodes 26 arranged around the semiconductor integrated circuit 22 and connected with internal wiring thereof, and an upper supporting substrate 14 bonded to the semiconductor substrate 10 through an acryl resin layer 50 wherein the acryl resin layer 50 extends up to the end part of the pad electrodes 26. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2004281963(A) 申请公布日期 2004.10.07
申请号 JP20030074819 申请日期 2003.03.19
申请人 SANYO ELECTRIC CO LTD 发明人 TAKECHI YOSHIMASA;KONISHI MINORU
分类号 H01L23/29;H01L23/31;(IPC1-7):H01L23/29 主分类号 H01L23/29
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