发明名称 ELECTRON RAY EXPOSURE METHOD AND APPARATUS THEREOF TO REDUCE EXPOSURE TIME
摘要 PURPOSE: An electron ray exposure method and its apparatus are provided, to reduce the electron ray exposure time for enhancing productivity and to lower the cost required for the formation of pattern. CONSTITUTION: The electron ray exposure method comprises the steps of forming the mask data having the information of mask where a plurality of basic circuit patterns are formed; generating a plurality of division circuit patterns by dividing the circuit pattern to be exposed to a substrate into the unit equal to that of the basic circuit patterns; selecting the basic circuit pattern corresponding to the each division circuit pattern based on the mask data; and exposing the basic circuit pattern selected by using the mask to the substrate with a certain position relation.
申请公布号 KR20040084699(A) 申请公布日期 2004.10.06
申请号 KR20040019521 申请日期 2004.03.23
申请人 SEMICONDUCTOR LEADING EDGE TECHNOLOGIES, INC. 发明人 YOSHIOKA NOBUYUKI;YAMABE MASAKI;ENDO NOBUHIRO;WAKAMIYA WATARU
分类号 G03F1/20;G03F1/68;G03F7/20;H01J37/305;H01L21/027;(IPC1-7):G03F7/20 主分类号 G03F1/20
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