METHOD FOR FORMING CONTACT OF SEMICONDUCTOR DEVICE TO REDUCE DOPANT LOSS

摘要

PURPOSE: A method for manufacturing a contact of a semiconductor device is provided to reduce dopant loss in a substrate and to simplify process by forming a nitride layer as a diffusion barrier layer between a titanium film and a titanium nitride layer. CONSTITUTION: An insulating layer(13) with a contact hole is formed on a substrate(11). By wet etching of the contact hole, a native oxide layer is removed. A titanium film(19), a nitride layer(21) as a diffusion barrier layer and a titanium nitride layer(23) are sequentially formed on the resultant structure including the contact hole. A titanium silicide layer(25) is formed at the bottom of the contact hole by RTP(Rapid Thermal Processing). Then, a tungsten film(27) is filled in the contact hole.