| 摘要 |
PURPOSE: A positive resist composition and a pattern formation method using the composition are provided, to reduce the generation of crack in thermal flow process and to improve dry etching resistance. CONSTITUTION: The positive resist composition comprises a resin whose solubility in an alkali developer can be increased by the action of an acid and which contains 50-100 mol% of a repeating unit derived from an acrylate derivative based on the total repeating units and has at least one kind of repeating unit selected from a repeating unit represented by the formula IV and a repeating unit represented by the formulas V-1, V-2, V-3 and V-4, and a repeating unit represented by the formula AII; a compound which can generate an acid when irradiated with an active ray or radiation; and an organic solvent which comprises at least one solvent selected from propylene glycol monoalkyl ether carboxylate, an alkyl lactate and a linear ketone, and a cyclic ketone, wherein R1a is H or CH3; W1 is a single bond or a divalent connecting group; Ra1, Rb1, Rc1, Rd1 and Re1 are independently H or an alkyl group; m and n are independently an integer of 0-3, and m+n is 2-6; R1b to R5b are independently H, an alkyl group, a cycloalkyl group or an alkenyl group, and two of them can combine together to form a ring; R1c is H or CH3; and R2c to R4c are independently H, OH, an alkoxy group, an acyloxy group or an alkyloxycarbonyloxy group, and one or two of them is OH.
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