发明名称 |
Thyristor having one or more doped layers |
摘要 |
A method is provided for forming one or more doped layers using ion-implantation in the fabrication of thyristor devices. For example, these thyristors may be made from single crystalline silicon carbide. According to one aspect of the invention, one of the required layers is formed by introducing dopants after crystal growth as opposed to conventional methods which involve doping during crystal growth. Specifically, impurities may be introduced by using the technique of ion implantation.
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申请公布号 |
US6787816(B1) |
申请公布日期 |
2004.09.07 |
申请号 |
US20010944522 |
申请日期 |
2001.08.31 |
申请人 |
RENSSELAER POLYTECHNIC INSTITUTE |
发明人 |
CHOW TATSING P.;FEDISON JEFFREY B. |
分类号 |
H01L21/332;H01L29/24;H01L29/74;(IPC1-7):H01L29/68 |
主分类号 |
H01L21/332 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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