Silicon-germanium devices for CMOS formed by ion implantation and solid phase epitaxial regrowth

摘要

A PMOS transistor is formed in a CMOS integrated circuit, having a Si1-xGex/Si heterojunction between the channel region and the substrate. The method is applicable to large volume CMOS IC fabrication. Germanium is implanted into a silicon substrate, through a gate oxide layer. The substrate is then annealed in a low temperature furnace, to form Si1-xGex in the channel region.