发明名称 MANUFACTURING APPARATUS FOR SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing a semiconductor device which is capable of forming a clean conductive film restraining a volatile metal compound originating from the film from adhering to the surface of the conductive film, when a treated substrate with a film containing metal elements becoming the components of the volatile metal compound is subjected to thermal treatment. SOLUTION: The apparatus 1 for manufacturing a semiconductor device is equipped with a chamber 2, a heating device 3, and an adsorbent 4. The treated substrate 5 with films 34 and 35 containing metal elements serving as the components of the volatile metal compound is held inside the chamber 2. The treated substrate 5 held inside the chamber 2 is heated by the heating device 3. The adsorbent 4 is provided inside the chamber 2 in a freely detachable manner, and the volatile metal compound generated from the films 34 and 35 by heating the treated substrate 5 is adsorbed by the adsorbent. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004247333(A) 申请公布日期 2004.09.02
申请号 JP20030032426 申请日期 2003.02.10
申请人 TOSHIBA CORP 发明人 NATORI KATSUAKI;YAMAKAWA KOJI;ARISUMI OSAMU;ITOKAWA HIROSHI;NAKAZAWA HIROSUKE;KANETANI HIROYUKI;KUMURA YOSHINORI
分类号 H01L21/28;C23C14/08;C23C14/58;C23C16/00;H01L21/00;H01L21/02;H01L21/20;H01L21/26;H01L21/768;H01L21/8234;H01L21/8246;H01L23/58;H01L27/105;H01L27/115;H01L29/417;H01L29/76;H01L31/062;(IPC1-7):H01L21/26 主分类号 H01L21/28
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