| 摘要 |
PROBLEM TO BE SOLVED: To achieve a high-density arrangement of unit structures each comprising a carbon tubular body and electrodes at its both end sections, and to mount the same. SOLUTION: Protective films 7 which cover the whole surfaces of catalytic layers 4 arranged in a plurality of insular forms on a substrate 6 are fabricated of a substance that retards the growth of carbon nanotubes 1. By charged particle beam irradiation, the catalytic layers 4 covered by the protective films 7 are made very fine, and, in parts of the protective films 7, surfaces are formed where the catalytic layers 4 are exposed. The positions and growth directions of the carbon nanotubes 1 to be synthesized starting at the exposed surfaces of the catalytic layers 4 are controlled by changing the positions and directions in the exposed surface formation process. The characteristics of the semiconductor device 100 are controlled by a substance inserted at the end sections of the synthesized carbon nanotubes 1 and contained in the semiconductor. After the formation of first electrodes 2 and second electrodes 3 at the growth starting side end sections and the growth terminating side end sections of the carbon nanotubes 1, interlayer insulating films 9 are formed, and then the semiconductor device 100 is completed, with a logic circuit comprising an n-type FET (field effect transistor) 20n and a p-type FET 20p mounted thereon. COPYRIGHT: (C)2004,JPO&NCIPI |
