A field effect transistor semiconductor device,申请号EP20020781506-传众专利搜索

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发明名称	A field effect transistor semiconductor device
摘要
申请公布号	EP1449256(A1)	申请公布日期	2004.08.25
申请号	EP20020781506	申请日期	2002.11.13
申请人	KONINKLIJKE PHILIPS ELECTRONICS N.V.	发明人	HUETING, RAYMOND, J., E.;SLOTBOOM, JAN, W.;MAGNEE, PETRUS, H., C.
分类号	H01L29/06;H01L29/41;H01L21/336;H01L21/338;H01L21/8234;H01L27/06;H01L27/095;H01L29/08;H01L29/12;H01L29/40;H01L29/423;H01L29/739;H01L29/772;H01L29/778;H01L29/78;H01L29/786;H01L29/80;H01L29/812;(IPC1-7):H01L29/06	主分类号	H01L29/06
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