发明名称 |
Non-gated thyristor device |
摘要 |
A semiconductor device with two epitaxial layers formed on a substrate. The middle layer of epitaxial material can be formed thin and with an appropriate doping concentration to provide a low avalanche breakdown voltage with a negative resistance characteristic. The top layer of epitaxial material is doped with the same concentration as the substrate to provide a two-terminal thyristor device with symmetrical bidirectional operating characteristics.
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申请公布号 |
US6781161(B1) |
申请公布日期 |
2004.08.24 |
申请号 |
US20030410317 |
申请日期 |
2003.04.09 |
申请人 |
TECCOR ELECTRONICS, LP |
发明人 |
TURNER, JR. ELMER L.;WANG YONG-FA ALAN |
分类号 |
H01L29/861;H01L29/87;(IPC1-7):H01L29/74;H01L21/332 |
主分类号 |
H01L29/861 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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