发明名称 |
Magnetic random access memory and method of operating the same |
摘要 |
A magnetic random access memory using magnetic domain drag and giant magnetoresistance (GMR) or tunnel magnetoresistance (TMR) and a method of operating the same, wherein the magnetic random access memory includes a data storage unit including a fixed layer, a non-magnetic layer, and a free layer having two ends; a data input means electrically connected to both ends of the free layer, for applying current to the free layer to input data into the data storage unit; and a data output means electrically connected to the free layer and the fixed layer to output data stored in the data storage unit. Accordingly, a magnetic random access memory according to the present invention has superior performance than one using a switching field to record data.
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申请公布号 |
US6781871(B2) |
申请公布日期 |
2004.08.24 |
申请号 |
US20020316844 |
申请日期 |
2002.12.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK WAN-JUN;KIM TAE-WAN;SONG I-HUN;PARK SANG-JIN;GAMBINO RICHARD J. |
分类号 |
G11C11/15;G11C11/16;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):G11C11/00;G11C11/14 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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