Fabrication of a substrate incorporating a buried insulating layer, which is formed on a semiconductor substrate with ion implantation to control the thickness of the layers and facilitate division

摘要

Fabrication of a substrate incorporating a buried insulating layer comprises: (a) forming an insulating layer (12) on a semiconductor region of a substrate (11); (b) implanting some ions in the substrate across the insulating layer to form a layer (13) of implanted ions; (c) thinning the insulating layer to form a thin insulating layer (12a); (d) placing a first substrate thus prepared onto a second substrate (20) to form a stack (30) which is then divided at the level of the layer of implanted ions.