发明名称 Semiconductor integrated circuit device and a method of manufacturing the same
摘要 A semiconductor integrated circuit device is provided which includes an active region, a shallow groove isolation adjacent to the active region, and a semiconductor element formed in the active region and having a gate. The sum of a width of the active region and a width of the shallow groove isolation constitutes a minimum pitch in the direction of a gate width of the gate, and the width of the active region is set larger than one-half of the minimum pitch.
申请公布号 US2004159883(A1) 申请公布日期 2004.08.19
申请号 US20040778081 申请日期 2004.02.17
申请人 SUZUKI NORIO;ICHIZOE HIROYUKI;KOJIMA MASAYUKI;OKAMOTO KEIJI;HORIBE SHINICHI;WATANABE KOZO;YOSHIDA YASUKO;IKEDA SHUJI;TAKAMATSU AKIRA;ISHITSUKA NORIO;OGISHIMA ATSUSHI;SHIMODA MAKI 发明人 SUZUKI NORIO;ICHIZOE HIROYUKI;KOJIMA MASAYUKI;OKAMOTO KEIJI;HORIBE SHINICHI;WATANABE KOZO;YOSHIDA YASUKO;IKEDA SHUJI;TAKAMATSU AKIRA;ISHITSUKA NORIO;OGISHIMA ATSUSHI;SHIMODA MAKI
分类号 H01L21/02;H01L21/762;H01L21/8242;(IPC1-7):H01L21/00 主分类号 H01L21/02
代理机构 代理人
主权项
地址