发明名称 |
Semiconductor integrated circuit device and a method of manufacturing the same |
摘要 |
A semiconductor integrated circuit device is provided which includes an active region, a shallow groove isolation adjacent to the active region, and a semiconductor element formed in the active region and having a gate. The sum of a width of the active region and a width of the shallow groove isolation constitutes a minimum pitch in the direction of a gate width of the gate, and the width of the active region is set larger than one-half of the minimum pitch.
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申请公布号 |
US2004159883(A1) |
申请公布日期 |
2004.08.19 |
申请号 |
US20040778081 |
申请日期 |
2004.02.17 |
申请人 |
SUZUKI NORIO;ICHIZOE HIROYUKI;KOJIMA MASAYUKI;OKAMOTO KEIJI;HORIBE SHINICHI;WATANABE KOZO;YOSHIDA YASUKO;IKEDA SHUJI;TAKAMATSU AKIRA;ISHITSUKA NORIO;OGISHIMA ATSUSHI;SHIMODA MAKI |
发明人 |
SUZUKI NORIO;ICHIZOE HIROYUKI;KOJIMA MASAYUKI;OKAMOTO KEIJI;HORIBE SHINICHI;WATANABE KOZO;YOSHIDA YASUKO;IKEDA SHUJI;TAKAMATSU AKIRA;ISHITSUKA NORIO;OGISHIMA ATSUSHI;SHIMODA MAKI |
分类号 |
H01L21/02;H01L21/762;H01L21/8242;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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地址 |
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