| 摘要 |
A method of controlling gas flow to a semiconductor processing reactor includes opening a first gas manifold inlet valve coupled between a first regulator and a gas manifold; regulating a flow rate of a flow of a first process gas through the first gas manifold inlet valve to the gas manifold with the first regulator; opening a second gas manifold inlet valve coupled between a second regulator and the gas manifold; and regulating a flow rate of a flow of a second process gas through the second gas manifold inlet valve to the gas manifold with the second regulator. The first process gas and the second process gas mix in the gas manifold.
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