| 摘要 |
<p>PURPOSE: To make possible reducing the number of masks at the time of manufacturing, without generating a leak current between a source and a drain, and realizing simplification of manufacturing process and stabilization of TFT characteristics. CONSTITUTION: An operating semiconductor layer 6 composed of amorphous silicon, a gate insulating film 7 and a gate electrode 8G wherein a planar pattern exists inside as compared with a planar pattern of the operating semiconductor layer 6 are laminated on an insulating substrate 1. At least a part or all the part of a protruding part from the gate electrode 8G of the operating semiconductor layer 6 is constituted of a thin film transistor which is changed into different one from the operating semiconductor layer 6.</p> |
