| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which restricts a generation of a leak current and a stress migration at a high production yield. SOLUTION: An insulating film 101 is formed on a surface of a substrate, and a first wiring layer 102 is formed. Next, an SiN film 103, an SiO<SB>2</SB>film 104, and an FSG film 105 are formed, and a through hole 106 and a wiring groove 107 are formed. Here, the SiN film 103 is formed in the range of temperatures of 400 to 450°C and the FSG film 105 is formed in the range of temperatures of 425 to 475°C. Continuously, after a barrier film 108, a Cu film 109 and a Cu film 110 are deposited, the substrate is heated. Next, the barrier film 108 and the Cu film 111 are removed from a surface of the FSG film 105 by a CMP to form a second wiring layer 112. Thereafter, the same process is repeated to form a multilayer wiring structure. Finally, a barrier film 123 and an aluminum film 124 are processed in a specific shape, and before an SiN film is deposited, heating is performed at 400°C or below under a hydrogen atmosphere. COPYRIGHT: (C)2004,JPO&NCIPI
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