发明名称 |
Electrostatic discharge circuit and method therefor |
摘要 |
An ESD protection circuit (81) and a method for providing ESD protection is provided. In some embodiments, an N-channel transistor (24), which can be ESD damaged, is selectively turned on and made conducting. The purpose of turning on the N-channel transistor (24) is to maximize the Vt1 of the N-channel transistor (24). Vt1 is the drain-to-source voltage point at which the parasitic bipolar action of the N-channel transistor (24) first occurs. In some embodiments, the ESD protection circuit (81) includes a diode (64) which provides an additional current path from the I/O pad 31 to a first power supply node (76).
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申请公布号 |
US2004141267(A1) |
申请公布日期 |
2004.07.22 |
申请号 |
US20030348814 |
申请日期 |
2003.01.22 |
申请人 |
KHAZHINSKY MICHAEL G.;MILLER JAMES W.;STOCKINGER MICHAEL |
发明人 |
KHAZHINSKY MICHAEL G.;MILLER JAMES W.;STOCKINGER MICHAEL |
分类号 |
H01L;H01L23/62;H01L27/02;H01L27/04;H02H1/04;H02H3/00;H02H3/20;H02H3/22;H02H7/00;H02H9/00;H02H9/06;(IPC1-7):H02H9/00 |
主分类号 |
H01L |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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