发明名称 Thin film transistor with protective cap over flexible substrate, electronic device using the same, and manufacturing method thereof
摘要 <p>Provided are a thin film semiconductor device realized on a flexible substrate, an electronic device using the same, and a manufacturing method thereof. The thin film semiconductor device includes a flexible substrate, a semiconductor chip, which is formed on the flexible substrate, and a protective cap, which seals the semiconductor chip. The electronic device includes a flexible substrate and a semiconductor chip formed on the flexible substrate and further includes a protective cap that seals the semiconductor chip. The durability of the thin film semiconductor device against the stress due to the bending of the substrate is improved by using the protective cap.</p>
申请公布号 EP1435661(A2) 申请公布日期 2004.07.07
申请号 EP20030258178 申请日期 2003.12.24
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, DO-YOUNG;PARK, WAN-JUN;PARK, YOUNG-SOO;LEE, JUNE-KEY;MIN, YO-SEP;KWON, JANG-YEON;SEO, SUN-AE;CHOI, YOUNG-MIN;CHAE, SOO-DOO
分类号 H01L27/32;H01L49/02;G02F1/1333;G02F1/1341;G02F1/1362;H01L21/336;H01L21/60;H01L21/77;H01L21/84;H01L23/31;H01L29/786;H01L51/52;(IPC1-7):H01L27/00;G02F1/133 主分类号 H01L27/32
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