| 摘要 |
PURPOSE: A method for forming a storage node contact of a capacitor is provided to reduce loss of a stopping oxide layer and to restrain dishing of polysilicon by polishing the polysilicon using the stopping oxide layer. CONSTITUTION: An insulating layer(7) with a contact hole is formed on a semiconductor substrate. The first storage node contact(8) is formed by filling a polysilicon layer in the contact hole. A stopping oxide layer(10) is formed on the resultant structure. An opening part is formed by selectively etching the stopping oxide layer. The second storage node contact(9) is formed by filling a polysilicon layer in the opening part and polishing the polysilicon layer to expose the stoppling oxide layer.
|
