METHOD FOR MANUFACTURING MIM CAPACITOR IN SEMICONDUCTOR STACK STRUCTURE

摘要

PURPOSE: A method for manufacturing an MIM(Metal/Insulator/Metal) capacitor in a semiconductor stack structure is provided to reduce manufacturing cost and to prevent plasma damage by using wet-etching instead of dry-etching. CONSTITUTION: A lower metal film(200) is formed on an oxide layer(100). An insulating layer(300) is deposited on the lower metal film. An upper metal film is deposited on the insulating layer by sputtering. An upper metal pattern(400) is formed using a photoresist pattern. By wet-etching and ashing, an MIM capacitor is formed.