| 摘要 |
PURPOSE: A method for forming a metal contact of a semiconductor device is provided to increase process margin and to reduce loss of a polysilicon layer as an upper electrode by using a nitride layer as an etch stop layer. CONSTITUTION: A polysilicon layer and a nitride layer(110) as an etch stop layer are sequentially formed on a semiconductor substrate(100) with a plurality of word lines(101) and lower electrodes(104). An upper electrode(105) is formed by patterning the polysilicon layer using the nitride layer as the etch stop layer. An interlayer dielectric(107) and a sacrificial oxide layer(108) are sequentially formed on the resultant structure. Metal contacts are formed by selectively etching the sacrificial oxide layer and the interlayer dielectric.
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