| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device which secures data holding characteristics of higher reliability by reducing voltage stress to variable resistance elements of non-selected memory cells in read and write operations. <P>SOLUTION: The nonvolatile semiconductor storage device has a memory array in which a plurality of nonvolatile memory cells 1 are arranged in the row and column directions. Further, a plurality of word lines WL and a plurality of bit lines BL are arranged in the directions of row and column, respectively, for selecting a predetermined memory cell or a memory cell group from among them. The memory cell 1 is formed by connecting one end of a variable resistance element 2 for storing information by electric resistance variation to the source of the selected transistor 3. In the memory cell array, the drain of the selected transistor 3 connects to a common bit line BL along the direction of the column, the other end of the variable resistance element 2 connects to the source line SL, and the gate of the selected transistor 3 connects to the common word line WL along the direction of the row. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
