SILICON OXYCARBIDE, METHOD FOR GROWING SILICON OXYCARBIDE LAYER, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To prevent the peeling of films and cracks in the interlayer insulation layer of multilayer wiring. SOLUTION: A method for manufacturing a semiconductor device comprises a process of preparing an underlayer structure having a silicon carbide layer covering copper wiring, and a process of growing silicon oxycarbide through vapor phase growth by using tetramethylcyclotetrasiloxane, carbon dioxide, and oxygen at a flow rate of 3% or less to the flow rate of the carbon dioxide as source gases. A method for manufacturing other semiconductor devices comprises a process of preparing the underlayer structure having the silicon carbide layer covering the copper wiring, a process of performing hydrophilicizing treatment to the surface of the silicon carbide layer of the underlayer structure with the plasma of a weak oxidative gas having the molecular weight larger than O2and containing oxygen, and a process of forming a low-dielectric constant insulation layer with the dielectric constant lower than that of a silicon oxide on the surface of the hydrophilicized silicon carbide layer. COPYRIGHT: (C)2004,JPO