| 摘要 |
PURPOSE: A method for forming a gate of a semiconductor device is provided to secure the capacitance of a gate isolating layer enough by using a high dielectric layer as the gate isolating layer. CONSTITUTION: A gate isolating layer(11) is formed on a semiconductor substrate(10). A diffusion barrier(12) is formed on the gate isolating layer. A gate material layer(13) is formed on the diffusion barrier. At this time, the gate isolating layer, the diffusion barrier, and the gate material layer contain the same metal. Preferably, the gate isolating layer, the diffusion barrier, and the gate material layer are made of a metal oxide layer, the first metal nitride layer, and a metal layer or the second metal nitride layer, respectively.
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